LN66F データシート PDFこの部品の機能は「Gaas Infrared Light Emitting Diode」です。 |
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部品番号 |
LN66F GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm For light source of remote control systems Features High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emit Panasonic Semiconductor |
文字列「 LN66 」「 66F 」で始まる検索結果です。 |
部品説明 |
LN66 GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect Panasonic Semiconductor |
LN66L GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical control systems Features High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wid Panasonic Semiconductor |
05146566-5501 Powerware 5115 BTU Ratings Powerware 5115 BTU Ratings Power Out (watts) 320 500 670 950 320 500 670 950 Model Number Part Number Efficiency* 92% 92% 92% 92% 92% 92% 92% 92% Power In (watts) 347.8 543.5 728.3 1032.6 347.8 543.5 728.3 1032.6 Loss (watts) 27.8 43.5 58.3 82.6 27.8 43.5 58.3 82.6 Watt Hou ETC |
0663001. Axial Lead and Cartridge Fuses Littelfuse |
0663001. Axial Lead and Cartridge Fuses Next Previous Axial Lead and Cartridge Fuses Subminiature LT-5™ Time Lag Fuse 663 Series ELECTRICAL CHARACTERISTICS: % of Ampere Rating 210% 275% 400% 1000% Time 2 minutes, Maximum .4 sec Min.; 10 seconds Max .15 sec Min.; 3 seconds Maximum .02 sec Min. .15 seconds Maximum Littelfuse |
0P166 GaAs Plastic Infrared Emitting Diodes Optotek |
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