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Datasheet LN66 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | LN66 | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN66
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wid |
 Panasonic Semiconductor |
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| 2 | LN66F | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
Unit : mm
For light source of remote control systems Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transp |
Panasonic Semiconductor |
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| 1 | LN66L | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max. 2-0.6±0.15 2.54
For optical control systems Features
High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = |
Panasonic Semiconductor |
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