Datasheet LN2306LT3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LN2306LT3G	30V N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. ●FEATURES 1)VDS= 30V 2)RDS(ON)	LRC

LN2306L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LN2306LT1G	30V N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. ●FEATURES	LRC
LN2306LT3G	30V N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. ●FEATURES	LRC

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Número de pieza	Descripción	Fabricantes	PDF
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