LM3Z56VT1G データシート PDFこの部品の機能は「Zener Voltage Regulators」です。 |
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部品番号 |
LM3Z56VT1G Zener Voltage Regulators LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators 200 mW SOD–323 Surface Mount This series of Zener diodes is packaged in a SOD–323 surface mount package that has a power dissipation of 200 mW. Leshan Radio Company |
LM3Z56VT1G Zener Voltage Regulators LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators 200 mW SOD–323 Surface Mount ƽ We declare that the material of product compliance with RoHS requirements. LM3ZxxT1G SERIES 1 Device* LM3ZxxxT1 Leshan Radio Company |
文字列「 LM3Z56VT1 」「 3Z56VT1G 」で始まる検索結果です。 |
部品説明 |
2SC3561 N-Channel MOSFET Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3561 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High sp Inchange Semiconductor |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba Semiconductor |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba Semiconductor |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba Semiconductor |
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