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Datasheet L-34F3C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | L-34F3C | INFRA-RED EMITTIMG DIODES T-1 (3mm) INFRA-RED EMITTING DIODES
L-34F3C L-34SF4C L-34SF6C L-34SF7C L-34F3BT L-34SF4BT L-34SF6BT L-34SF7BT
Features
!MECHANICALLY AND SPECTRALLY MATCHED
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 and SF6 and SF7 Made with Gallium Aluminum Arsenide Infrared Emitting |  ETC | diode |
| 2 | L-34F3C | INFRA-RED EMITTIMG DIODES T-1 (3mm) INFRA-RED EMITTING DIODES
L-34F3C L-34SF4C L-34SF6C L-34SF7C L-34F3BT L-34SF4BT L-34SF6BT L-34SF7BT
Features
!MECHANICALLY AND SPECTRALLY MATCHED
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 and SF6 and SF7 Made with Gallium Aluminum Arsenide Infrared Emitting | ETC | diode |
L-3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | L-314 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dissipation VR（V） 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S  PARA diode | | |
| 2 | L-315 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dissipation VR（V） 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S PARA diode | | |
| 3 | L-316 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dissipation VR（V） 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S PARA diode | | |
| 4 | L-318 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dissipation VR（V） 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S PARA diode | | |
| 5 | L-319 | 3.0mm Dia LED LAMP / MULTI-COLOR L-319XX 3.0mm Dia LED LAMP, MULTI-COLOR
Chip Part No. Raw Material Emitted Color Lens Color
Wave Length λp(nm)
Electro-Optical Characteristics Vf(V)20mA Iv(mcd)10mA Typ. Max. Typ.
View Angle (deg)
GaP GaP GaAsP/GaP L-319EGW GaP GaP L-319GYW GaAsP/GaP GaAlInP L-319LESGW GaP L-319HGW
Red Green PARA led | | |
| 6 | L-32P3C | PhotoTransistor PHOTOTRANSISTOR
L-32P3C
Features
!MECHANICALLY
Description
AND SPECTRALLY MATCHED TO P3 Made with NPN silicon phototransistor chips.
THE L-34 SERIES INFRARED EMITTING LED LAMP.
!WATER
CLEAR LENS.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.  Kingbright transistor | | |
| 7 | L-34F3BT | INFRARED EMITTING DIODE T-1 (3mm) INFRARED EMITTING DIODE
Part Number: L-34F3BT
Features
z Mechanically and spectrally matched to the phototransistor. z RoHS compliant.
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
KingbrightPackage Dimensions
Notes: 1. All dimensions are in millimeters (inches). Kingbright diode | |
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