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Datasheet KSD1692 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | KSD1692 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
KSD1692 TRANSISTOR (NPN)
TO – 126
FEATURES
z High DC Current Gain z Low Collector Saturation Voltage z High Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC |
 JCST |
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| 2 | KSD1692 | NPN Epitaxial Silicon Transistor |
 Samsung semiconductor |
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| 1 | KSD1692 | NPN Silicon Darlington Transistor KSD1692
KSD1692
Feature
• • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25°C) TO-126 2.Collector 3.Base
1
1. Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise n |
 Fairchild Semiconductor |
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