KSC2859 データシート PDFこの部品の機能は「Low Frequency Power Amplifier」です。 |
検索結果を表示する |
部品番号 |
KSC2859 Low Frequency Power Amplifier KSC2859 KSC2859 Low Frequency Power Amplifier • Complement to KSA1182 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless othe Fairchild Semiconductor |
KSC2859 NPN (LOW FREQUENCY POWER AMPLIFIER) Samsung semiconductor |
文字列「 KSC2859 」「 2859 」で始まる検索結果です。 |
部品説明 |
2N2859 (2N2xxx) Power Transistors w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c API Electronics |
2SC2859 TRANSISTOR (AUDIO FREQUENCY LOW POWER/ DRIVER STAGE AMPLIFIER/ SWITCHING APPLICATIONS) Toshiba Semiconductor |
2SC2859 Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97 Kexin |
2SC2859 NPN Plastic-Encapsulate Transistor 2SC2859 Elektronische Bauelemente 0.5A , 35V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 A 3 3 Excellent hFE Linearity Switching Applications L Top View C B 1 2 2 CLASSIFICATION OF hF SeCoS |
2SC2859 TRANSISTOR 2 SC2859 TRANSISTOR (NPN) SOT–23 FEATURES Excellent hFE Linearity Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collecto Jin Yu Semiconductor |
2SK2859 Ultrahigh-Speed Switching Applications Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features · Low On resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2149 [2SA2859] 8 5 0.3 5.0 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1 : No C Sanyo Semicon Device |
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