KFG5616D1M-DEB データシート PDFこの部品の機能は「Onenand256 Flash Memory」です。 |
検索結果を表示する |
部品番号 |
KFG5616D1M-DEB OneNAND256 FLASH MEMORY OneNAND256 FLASH MEMORY www.Datasheet.jp OneNAND SPECIFICATION Product OneNAND256 Part No. KFG5616Q1M-DEB KFG5616D1M-DEB KFG5616U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~ Samsung semiconductor |
文字列「 KFG5616D1 」「 5616D1M 」で始まる検索結果です。 |
部品説明 |
KFG5616D1A-DEB5 OneNAND Specification FLASH MEMORY OneNAND256(KFG5616x1A-xxB5) FLASH MEMORY OneNANDTM Specification Density Part No. KFG5616Q1A-DEB5 KFG5616Q1A-PEB5 KFG5616D1A-DEB5 KFG5616D1A-PEB5 KFG5616U1A-DIB5 KFG5616U1A-PIB5 VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 2.65V(2.4V~ Samsung semiconductor |
KFG5616D1A-PEB5 OneNAND Specification FLASH MEMORY OneNAND256(KFG5616x1A-xxB5) FLASH MEMORY OneNANDTM Specification Density Part No. KFG5616Q1A-DEB5 KFG5616Q1A-PEB5 KFG5616D1A-DEB5 KFG5616D1A-PEB5 KFG5616U1A-DIB5 KFG5616U1A-PIB5 VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 2.65V(2.4V~ Samsung semiconductor |
ESD56161D04 Small Power TVS ESD56161D04 1-Line, Uni-directional, Transient Voltage Suppressor Descriptions The ESD56161D04 is a uni-directional Transient Voltage Suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56161D04 WillSEMI |
ESD56161D05 Small Power TVS ESD56161D05 1-Line, Uni-directional, Transient Voltage Suppressor Descriptions The ESD56161D05 is a uni-directional Transient Voltage Suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56161D05 WillSEMI |
HYB18T256161AF-22 256-Mbit x16 GDDR2 DRAM Data Sheet, Rev. 1.30, July 2005 HYB18T256161AF–22/25/28/33 HYB18T256161AFL25/28/33 256-Mbit x16 GDDR2 DRAM RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG, Infineon |
HYB18T256161AF-25 256-Mbit x16 GDDR2 DRAM Data Sheet, Rev. 1.30, July 2005 HYB18T256161AF–22/25/28/33 HYB18T256161AFL25/28/33 256-Mbit x16 GDDR2 DRAM RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG, Infineon |
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