| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | KFG1G16Q2C | 1Gb OneNAND C-die OneNAND1Gb(KFG1G16Q2C-xEBx) FLASH MEMORY KFG1G16Q2C 1Gb OneNAND C-die AND IS SUBJECT INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS |
 Samsung Electronics |
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Recommended search results related to KFG1G16Q2C |
| Part No | Description ( Function) | Manufacturers | |
| KFG1G16Q2A-DEBx | FLASH MEMORY OneNAND1G(KFG1G16Q2A-DEBx) OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) Preliminary FLASH MEMORY OneNANDTM Preliminary Information Specification Density 1Gb 2Gb 4Gb Part No. KFG1G16Q2A-DEBx KFH2G16Q2A-DEBx KFW4G16Q2A-DEBx VCC(core & IO) 1.8V(1.7V |
Samsung Electronics |
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| KFG1G16Q2M | FLASH MEMOR OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density 1Gb 2Gb 4Gb Part No. KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Temperature E |
 Samsung semiconductor |
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| 2N1162 | SILICON PNP TRANSISTOR |
 New Jersey Semiconductor |
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| 2SA1162 | Silicon PNP Epitaxial Type Transistor 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 |
 Toshiba Semiconductor |
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| 2SA1162 | PNP Transistor FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. Plastic-Encapsulate Transistors 2SA1162(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Po |
 HOTTECH |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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