|
|
Datasheet K4T51163QG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4T51163QG | 512Mb G-die DDR2 SDRAM CSD18503Q5A
www.ti.com SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY |
Samsung |
K4T5116 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4T51163QJ | 512Mb J-die DDR2 SDRAM |
Samsung |
|
K4T51163QG | 512Mb G-die DDR2 SDRAM |
Samsung |
|
K4T51163QB | 512Mb B-die DDR2 SDRAM |
Samsung |
Esta página es del resultado de búsqueda del K4T51163QG. Si pulsa el resultado de búsqueda de K4T51163QG se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |