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Datasheet K3325-S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 40 | K330 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 |
 Knox Inc |
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| 39 | K3302 | Silicon N Channel MOS Type Field Effect Transistor 2SK3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching Regulator and DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDS |
 Toshiba Semiconductor |
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| 38 | K3304 | MOSFET ( Transistor ) - 2SK3304 TPS65170
www.ti.com SLVSA27 – OCTOBER 2009
LCD Bias Supply
Check for Samples :TPS65170
1
FEATURES
8.6V to 14.7V Input Voltage Range 2.8A Boost Converter Switch Current Limit Boost Converter Output Voltages up to 18.5V Boost and Buck Converter Short-Circuit Protection 1.5A Buck Converter Switch C |
 NEC |
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| 37 | K3306 | MOSFET ( Transistor ) - 2SK3306
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3306
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F)
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switchi |
NEC |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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