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K3114 データシート PDF ( Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | K3114 | 2SK3114 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel |
 NEC |
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K31 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| K3128 | 2SK3128 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S ( |
 Toshiba Semiconductor |
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| K3100G | 3.3V Crystal Clock Oscillators K3100G Series 3.3V Crystal Clock Oscillators TTL/CMOS Compatible Tight Symmetry (45/55%) Available Tri-State Option Available ±100ppm Stability Standard - K3100GC Tighter Stabilities Available ±25ppm Stability:- K3100GA ±50ppm Stability:- K3100GB |
 Champion |
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| K319 | 2SK319
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 Hitachi Semiconductor |
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| K3141 | Silicon N-Channel MOS FET 2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1070 |
 Renesas |
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| K319 | 2SK319 INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK319 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 |
 Inchange Semiconductor |
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| K3152 | 2SK3152 2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate |
Hitachi Semiconductor |
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