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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FE

   WESTCODE An IXYS Company Date:- 4 Aug, 2005 Data Sheet Issue:- 1 Provisional Data Medium Voltage Thyristor Types K3362T#360 to K3362T#420 Development Type No.: KX091TC420 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state volt

   WESTCODE An IXYS Company Date:- 17 Nov, 2004 Data Sheet Issue:- 1a Provisional Data Medium Voltage Thyristor Types K3503F#450 to K3503F#520 (Development Type No. KX094FC450-520) Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-sta

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK372 Unit: mm · High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −3

cosmo  Description The K3010 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.  Features 1.Current trans