K2957 データシート PDFこの部品の機能は「Mosfet ( Transistor ) - 2sk2957」です。 |
検索結果を表示する |
部品番号 |
K2957 MOSFET ( Transistor ) - 2SK2957 2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V Renesas |
文字列「 K2957 」「 2957 」で始まる検索結果です。 |
部品説明 |
2SK2957 Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drai Hitachi Semiconductor |
2SK2957 Silicon N Channel MOS FET 2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRS Renesas |
2SK2957L Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drai Hitachi Semiconductor |
2SK2957L Silicon N Channel MOS FET 2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRS Renesas |
2SK2957S Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drai Hitachi Semiconductor |
2SK2957S Silicon N Channel MOS FET 2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRS Renesas |
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