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データシート K2876-01MR PDF ( Circuit Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | K2876-01MR | 2SK2876-01MR 2SK2876-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET |
 Fuji Electric |
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K28 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| K283QVU-V1-F | Standard LCD Module 东莞奇创力显示器有限公司 Kitronix (Dong guan) Ltd. FOR APPROVAL 样 品 承 认 书 WE ARE PLEASED IN SENDDING YOU HEREWITH OUR SPECIFICATION AND DRAWING FOR YOUR APPROVAL. PLEASE RETURN TO US ONE COPY OF “FOR APPOVAL” WITH YOUR APPROVED SIGN |
 Kitronix |
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| K2889 | 2SK2889 2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2889 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.) |
 Toshiba Semiconductor |
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| K2834-01 | 2SK2834-01 Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// |
Fuji Electric |
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| K2836 | 2SK2836 2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2836 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 6.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.85 S |
 Toshiba |
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| K2881 | N-Channel Transistor ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION |
 Isahaya Electronics |
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| K2826 | 2SK2826 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX |
 NEC |
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