2SK2876-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET

东莞奇创力显示器有限公司 Kitronix (Dong guan) Ltd. FOR APPROVAL 样 品 承 认 书 WE ARE PLEASED IN SENDDING YOU HEREWITH OUR SPECIFICATION AND DRAWING FOR YOUR APPROVAL. PLEASE RETURN TO US ONE COPY OF “FOR APPOVAL” WITH YOUR APPROVED SIGN

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2889 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.)

2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2836 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 6.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.85 S

2SK2828 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC–DC converter • Avalanche ratings Outline TO–3P ADE-208-514 C (

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX