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文字列「 K2096 」「 2096 」で始まる検索結果です。 |
部品説明 |
2096E In-SystemProgrammableSuperFASTHighDensityPLD ispLSI 2096E In-System Programmable SuperFAST™ High Density PLD Features • SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 4000 PLD Gates — 96 I/O Pins, Six Dedicated Inputs — 96 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, LatticeSemiconductor |
2096VE 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD ispLSI 2096VE 3.3V In-System Programmable SuperFAST™ High Density PLD Features • SuperFAST HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 96 I/O Pins, Six Dedicated Inputs — 96 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, Sta LatticeSemiconductor |
2096VL 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD ispLSI 2096VL 2.5V In-System Programmable SuperFAST™ High Density PLD Features • SuperFAST HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 96 I/O Pins, Six Dedicated Inputs — 96 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, Sta LatticeSemiconductor |
2SD2096 TRANSISTOR NPN Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this ROHM Semiconductor |
2SK2096 Silicon N-Channel MOS FET 2SK2096 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche rat Hitachi Semiconductor |
AS7C32096A 3.3V 256K x 8 CMOS SRAM February 2006 ® AS7C32096A 3.3V 256K × 8 CMOS SRAM Features • Industrial and commercial temperature • Organization: 262,144 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Equ Alliance Semiconductor |
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