K1413 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | K1413 | 2SK1413 Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B [2SK1413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0. |
 Sanyo Semicon Device |
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K1 Datasheet ( データシート ) - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| K1733 | 2SK1733 Ordering number:EN3828 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1733 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1733] 2.5 1.45 6.9 1.0 4.0 1.0 |
 Sanyo |
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| K1454 | 2SK1454 Ordering number:EN3457 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1454 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2077A [2SK1454] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 |
Sanyo |
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| K10104T | LOW INPUT CURRENT PHOTOCOUPLER cosmo z Description The K1010 T series consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. K1010 T Series LOW INPUT CURRENT PHOTOCOUPLER z Schematic |
 Cosmo |
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| K1VA10 | Sidac SHINDENGEN Sidac K1V(A)10 OUTLINE DIMENSIONS Case : AX06 (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Surge On-state Current Symbol Tstg Tj VDRM IT Conditions Tl = 98 |
 Shindengen Mfg.Co.Ltd |
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| K1830 | 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package Marking Equivalent Circuit |
 Toshiba |
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| K1S321611C-FI70 | 2Mx16 bit Uni-Transistor Random Access Memory Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 1 |
 Samsung |
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| K1120NC360 | Medium Voltage Thyristor WESTCODE An IXYS Company Date:- 29 Mar, 2007 Data Sheet Issue:- 1 Provisional Data Medium Voltage Thyristor Types K1120NC360 to K1120NC420 Development Type No. KX192NC360-420 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note |
 IXYS |
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