K1165 データシート PDFこの部品の機能は「SilICon N Channel Mos Fet」です。 |
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部品番号 |
K1165 Silicon N Channel MOS FET 2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable Renesas Technology |
文字列「 K1165 」「 1165 」で始まる検索結果です。 |
部品説明 |
1165892 High power NPN silicon power transistors 1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free package Multicomp |
1165899 High power NPN silicon transistors 1165899 TO-3 High power NPN silicon transistors. Features: • High voltage capability. • High current capability. • Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters. Description: The BUX48/A silicon m Multicomp |
1165939 Transistors 1165939 Features: • 70W at 25°C case temperature. • 8A continuous collector current. • Minimum hFE of 1000 at 4V, 4A. TO-220 Package (Top View) Pin 2 is in electrical contact with the mounting base. Absolute maximum ratings at 25°C case temperature (unless otherwise no Multicomp |
2SB1165 PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. Sanyo Semicon Device |
2SB1165 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION ·With TO-126 package ·Complement to type 2SD1722 ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in relay drivers,high-speed in SavantIC |
2SC1165 UHF Band Power Amplifier Applications
Toshiba |
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