| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IXYA20N65C3D1 | IGBT ( Insulated Gate Bipolar Transistor ) XPTTM 650V IGBT GenX3TM w/Diode IXYA20N65C3D1 IXYP20N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = |
 IXYS |
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Recommended search results related to IXYA20N65C3D1 |
| Part No | Description ( Function) | Manufacturers | |
| IXYA20N65C3 | IGBT Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXYA20N65C3 IXYH20N65C3 VCES = 650V IC110 = 20A VCE(sat) 2.50V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IICCM110 IA EAS SSO |
IXYS |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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