IXXH30N60C3 データシート PDFこの部品の機能は「600v Igbts」です。 |
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部品番号 |
IXXH30N60C3 600V IGBTs XPTTM 600V IGBT GenX3TM IXXH30N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Wei IXYS |
文字列「 IXXH30N60C3 」「 30N60C3 」で始まる検索結果です。 |
部品説明 |
IXXH30N60C3D1 600V IGBTs XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C IXYS |
30N60C3 IGBT GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transien IXYS |
G30N60C3D HGTG30N60C3D HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The Intersil Corporation |
HGTG30N60C3 63A/ 600V/ UFS Series N-Channel IGBT HGTG30N60C3 Data Sheet January 2000 File Number 4042.2 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the lo Intersil Corporation |
HGTG30N60C3D 63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high Intersil Corporation |
HGTG30N60C3D 63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of Fairchild Semiconductor |
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