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IXXH30N60C3 データシート PDF

この部品の機能は「600v Igbts」です。


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部品番号
IXXH30N60C3

600V IGBTs


XPTTM 600V IGBT GenX3TM IXXH30N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Wei


IXYS
IXYS

データシート pdf



文字列「 IXXH30N60C3 」「 30N60C3 」で始まる検索結果です。

部品説明

IXXH30N60C3D1

600V IGBTs

XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C

IXYS
IXYS

 データシート pdf


30N60C3

IGBT

GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transien

IXYS
IXYS

 データシート pdf


G30N60C3D

HGTG30N60C3D

HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The

Intersil Corporation
Intersil Corporation

 データシート pdf


HGTG30N60C3

63A/ 600V/ UFS Series N-Channel IGBT

HGTG30N60C3 Data Sheet January 2000 File Number 4042.2 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the lo

Intersil Corporation
Intersil Corporation

 データシート pdf


HGTG30N60C3D

63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high

Intersil Corporation
Intersil Corporation

 データシート pdf


HGTG30N60C3D

63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf

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