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Datasheet IXTY1N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXTY1N80 | High Voltage MOSFET
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data
IXTA 1N80 IXTP 1N80 IXTY 1N80
VDSS ID25
RDS(on)
= 800 V = 750 mA = 11 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150° |
 IXYS |
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| 1 | IXTY1N80P | Power MOSFET ( Transistor ) Preliminary Technical Information
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P
VDSS = ID25 = ≤RDS(on)
800V 1A 14Ω
TO-263 (IXTA)
TO-220 (IXTP)
TO-251 (IXTU)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD M |
IXYS |
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