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Datasheet IXTM6N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IXTM6N80 | Power MOSFET ( Transistor ) Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A 1.8 Ω
800 V 6 A 1.4 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 IDM PD TJ TJM Tstg M
d
Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Co |
 IXYS |
 |
| 3 | IXTM6N80 | N-Channel Enhancement Mode Standard Power MOSFET
N-Channel Enhancement Mode
VDSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V
ID25 6A 6A
RDS(on) 1.8 Ω 1.4 Ω
Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 MΩ Continuous Transient TC |
 ETC |
|
| 2 | IXTM6N80A | Power MOSFET ( Transistor ) Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A 1.8 Ω
800 V 6 A 1.4 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 IDM PD TJ TJM Tstg M
d
Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Co |
IXYS |
|
| 1 | IXTM6N80A | N-Channel Enhancement Mode Standard Power MOSFET
N-Channel Enhancement Mode
VDSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V
ID25 6A 6A
RDS(on) 1.8 Ω 1.4 Ω
Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 MΩ Continuous Transient TC |
ETC |
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