IXTK21N100 データシート PDFこの部品の機能は「High Voltage Megamostmfets」です。 |
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部品番号 |
IXTK21N100 High Voltage MegaMOSTMFETs High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VI IXYS Corporation |
文字列「 IXTK21N100 」「 21N100 」で始まる検索結果です。 |
部品説明 |
HM31-21100 Encapsulated Current Sense Transformers MODEL HM31 SERIES Encapsulated Current Sense Transformers FEATURES AND BENEFITS • • • • • Complies with VDE safety agency requirements Excellent temperature characteristics Encapsulating technique used to ensure long term reliability Excellent linearity (current vs. ETC |
HM31-21100L Encapsulated Current Sense Transformers MODEL HM31 SERIES Encapsulated Current Sense Transformers FEATURES AND BENEFITS • • • • • Complies with VDE safety agency requirements Excellent temperature characteristics Encapsulating technique used to ensure long term reliability Excellent linearity (current vs. ETC |
HM621100A 1048576 word / 1 Bit High Speed CMOS Static RAM HM621100A Series 1048576-word × 1-bit High Speed CMOS Static RAM Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1bit. It realizes high speed access time (20/25/35 ns) and low power consumption, employing CMOS p Hitachi |
IXFK21N100F HiPerRF Power MOSFETs F-Class: MegaHertz Switching HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 21N100F IXFK 21N100F VDSS = 1000 V ID25 = 21 A RDS(on) = 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS V IXYS Corporation |
IXFK21N100Q HiPerFET Power MOSFETs Q-CLASS HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque IXYS |
IXFR21N100Q HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFR 21N100Q VDSS ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr £ 250 ns Symbol VDSS VDG IXYS Corporation |
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