Datasheet IXTA180N10T7 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTA180N10T7	Power MOSFET ( Transistor ) PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180 6.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25°	IXYS Corporation

IXTA180N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTA180N10T7	Power MOSFET ( Transistor ) PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180 6.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C t	IXYS Corporation
IXTA180N10T	Power MOSFET ( Transistor ) TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C t	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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