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Datasheet IXTA180N085T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXTA180N085T | Power MOSFET ( Transistor ) Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA180N085T IXTP180N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 180 5.5
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175 |
 IXYS Corporation |
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| 1 | IXTA180N085T7 | Power MOSFET ( Transistor ) TrenchMVTM Power MOSFET
IXTA180N085T7
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = ID25 =
RDS(on) ≤
85V 180A 5.5mΩ
TO-263 (7-lead)
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175 |
IXYS Corporation |
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