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Datasheet IXTA160N10T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXTA160N10T | Power MOSFET ( Transistor ) Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N10T IXTP160N10T
VDSS = ID25 =
RDS(on) ≤
100 160 7.0
V A mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 |
 IXYS Corporation |
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| 1 | IXTA160N10T7 | Power MOSFET ( Transistor ) Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 160 7.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to |
IXYS Corporation |
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