Datasheet IXTA160N075T7 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTA160N075T7	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25	IXYS Corporation

IXTA160N07 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTA160N075T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt P	IXYS Corporation
IXTA160N075T7	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°	IXYS Corporation

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