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Datasheet IXST30N60B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IXST30N60B | High Speed IGBT High Speed IGBT
IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability
VCES
ICES
tfi
600 V 2.0 V 140 ns 600 V 2.5 V 70 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ C |
 IXYS Corporation |
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| 2 | IXST30N60B2D1 | High Speed IGBT with Diode
High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSH 30N60B2D1 IXST 30N60B2D1
VCES = 600 V I C25 = 48 A V CE(sat) = 2.5 V
Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight
Test Conditions TJ = 25° |
 IXYS |
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| 1 | IXST30N60BD1 | High Speed IGBT High Speed IGBT with Diode
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
VCES IC25
VCE(sat)
Short Circuit SOA Capability
tfi
= 600 V = 55 A = 2.0 V = 140 ns
Symbol VCES VCGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C |
IXYS Corporation |
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