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Datasheet IXSN55N120AU1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IXSN55N120AU1 | High Voltage IGBT High Voltage IGBT with Diode
Short Circuit SOA Capability
IXSN 55N120AU1
VCES = 1200 V IC25 = 110 A VCE(sat) = 4V
3 2
Preliminary data
4 Symbol 1
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms |
IXYS Corporation |
IXSN55N120 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IXSN55N120A | High Voltage IGBT |
IXYS Corporation |
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IXSN55N120AU1 | High Voltage IGBT |
IXYS Corporation |
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Número de pieza | Descripción | Fabricantes | |
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