IXSM30N60 データシート PDFこの部品の機能は「Low Vce(sat) Igbt」です。 |
検索結果を表示する |
部品番号 |
IXSM30N60 Low VCE(sat) IGBT Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.Datasheet.jp Symbol VCES Test Conditio IXYS Corporation |
文字列「 IXSM30N60 」「 30N60 」で始まる検索結果です。 |
部品説明 |
IXSM30N60A Low VCE(sat) IGBT Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol VCES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IXYS Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
1SCA022770R3060 neutral and earth terminals
ABB |
2SB183060MA LOW IR SCHOTTKY BARRIER DIODE CHIPS 2SB183060MA 2SB183060MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Low power losses, high efficiency; High ESD capability; High surge capability; Guard ring constructi Silan |
2SC3060 (2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manu Fujitsu Media Devices |
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