IXGT39N60B データシート PDFこの部品の機能は「Hiperfast Igbt」です。 |
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部品番号 |
IXGT39N60B HiPerFAST IGBT HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE(sat) tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) www.Datasheet.jp Symbol Test Conditions TJ = 25° IXYS Corporation |
文字列「 IXGT39N60 」「 39N60B 」で始まる検索結果です。 |
部品説明 |
IXGT39N60BD1 HiPerFAST IGBT HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE(sat) tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C T IXYS Corporation |
1SCA022186R3960 neutral and earth terminals
ABB |
2C3960 Chip Type 2C3960 Geometry 0003 Polarity NPN Data Sheet No. 2C3960 Chip Type 2C3960 Geometry 0003 Polarity NPN Generic Packaged Part: 2N3960 Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high-speed current-mode logic s Semicoa |
2N3960 Type 2N3960 Geometry 0003 Polarity NPN Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per Semicoa Semiconductor |
2N3960 HIGH FREQUENCY TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (§ TA = 25°C Derate above 25°C Total Device Dissipation <& Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO vEB Motorola Semiconductors |
2N3960 NPN SILICON SWITCHING TRANSISTOR TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES 2N3960 2N3960UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM R Microsemi |
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