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Datasheet IXGT30N60B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IXGT30N60B | HiPerFASTTM IGBT HiPerFASTTM IGBT
IXGH30N60B IXGT30N60B
VCES IC25 VCE(sat) tfi
= 600 V = 60 A = 1.8 V = 100 ns
Symbol VCES VCGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 3 |
 IXYS Corporation |
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| 4 | IXGT30N60B2 | (IXGH30N60B2 / IXGT30N60B2) HiPerFAST IGBT
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B2 IXGT 30N60B2
VCES IC25 VCE(sat) tfi typ
= 600 V = 70 A < 1.8 V = 82 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Tes |
IXYS Corporation |
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| 3 | IXGT30N60B2D1 | IGBT Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B2D1 IXGT 30N60B2D1
VCES IC25 VCE(sat) tfi typ
= 600 V = 70 A < 1.8 V = 82 ns
Symbol
Test Conditions
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M� |
 IXYS |
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| 2 | IXGT30N60BD1 | HiPerFASTTM IGBT with Diode HiPerFASTTM IGBT with Diode
IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25
VCE(sat)
tfi(typ)
= 600 V = 60 A = 1.8 V = 100 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = |
IXYS Corporation |
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