Datasheet IXGR32N170H1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXGR32N170H1	High Voltage IGBT High Voltage IGBT with Diode Electrically Isolated Tab Preliminary Data Sheet IXGR 32N170H1 IVCC2E5S VCE(sat) tfi(typ) = 1700 V = 38 A = 3.5 V = 250 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RG	IXYS

IXGR32N17 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXGR32N170AH1	High Voltage IGBT with Diode Advance Technical Information High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.2 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg FC VISOL Test Co	IXYS
IXGR32N170H1	High Voltage IGBT High Voltage IGBT with Diode Electrically Isolated Tab Preliminary Data Sheet IXGR 32N170H1 IVCC2E5S VCE(sat) tfi(typ) = 1700 V = 38 A = 3.5 V = 250 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ =	IXYS

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