| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IXGN80N60A2D1 | IGBT ( Insulated Gate Bipolar Transistor ) Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1 ms IXGN80N60A2D1 VGE = 15 |
 IXYS |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to IXGN80N60A2D1 |
| Part No | Description ( Function) | Manufacturers | |
| IXGN80N60A2 | IGBT Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 M� |
IXYS |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||