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IXGM20N60 データシート PDF

この部品の機能は「(ixgh20n60 / Ixgm20n60) Low Vce(sat) Igbt」です。


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部品番号
IXGM20N60

(IXGH20N60 / IXGM20N60) Low VCE(sat) IGBT


www.Datasheet.jp VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSO


IXYS Corporation
IXYS Corporation

データシート pdf



文字列「 IXGM20N60 」「 20N60 」で始まる検索結果です。

部品説明

IXGM20N60A

(IXGH20N60 / IXGM20N60) Low VCE(sat) IGBT

VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C t

IXYS Corporation
IXYS Corporation

 データシート pdf


1N2060

HIGH POWER RECTFIERS

1N2054-1N2068 High-reliability discrete products and engineering services since 1977 HIGH POWER RECTFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb pl

Digitron Semiconductors
Digitron Semiconductors

 データシート pdf


20N60

600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allow

Unisonic Technologies
Unisonic Technologies

 データシート pdf


20N60A4D

HGTG20N60A4D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a M

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


20N60B

Hiperfast(tm) Igbt

HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weigh

IXYS Corporation
IXYS Corporation

 データシート pdf


20N60BD1

Hiperfast(tm) Igbt

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE =

IXYS Corporation
IXYS Corporation

 データシート pdf

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