IXGM20N60 データシート PDFこの部品の機能は「(ixgh20n60 / Ixgm20n60) Low Vce(sat) Igbt」です。 |
検索結果を表示する |
部品番号 |
IXGM20N60 (IXGH20N60 / IXGM20N60) Low VCE(sat) IGBT www.Datasheet.jp VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSO IXYS Corporation |
文字列「 IXGM20N60 」「 20N60 」で始まる検索結果です。 |
部品説明 |
IXGM20N60A (IXGH20N60 / IXGM20N60) Low VCE(sat) IGBT VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C t IXYS Corporation |
1N2060 HIGH POWER RECTFIERS 1N2054-1N2068 High-reliability discrete products and engineering services since 1977 HIGH POWER RECTFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb pl Digitron Semiconductors |
20N60 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allow Unisonic Technologies |
20N60A4D HGTG20N60A4D HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a M Fairchild Semiconductor |
20N60B Hiperfast(tm) Igbt HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weigh IXYS Corporation |
20N60BD1 Hiperfast(tm) Igbt HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = IXYS Corporation |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |