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Datasheet IXGK60N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IXGK60N60 | Ultra-Low VCE(sat) IGBT Ultra-Low VCE(sat) IGBT
IXGH 60N60 IXGK 60N60 IXGT 60N60
VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, li |
 IXYS Corporation |
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| 2 | IXGK60N60B2D1 | (IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode
Advance Technical Data
HiPerFAST TM IGBT with Diode
Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching
IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ)
= 600 V = 75 A < 1.8 V = 100 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) P |
IXYS Corporation |
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| 1 | IXGK60N60C2D1 | IGBT HiPerFASTTM IGBT with Diode
IXGK 60N60C2D1 IXGX 60N60C2D1
C2-Class High Speed IGBTs
V I CES VC25 t CE(sat)
fi(typ)
= 600 V = 75 A = 2.5 V = 35 ns
Symbol
Test Conditions
VCES VCGR
VGES VGEM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous Transient
IC25 TC = 25°C (limited b |
 IXYS |
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