Datasheet IXGK50N60B2D1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXGK50N60B2D1	IGBT Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V CGR VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous	IXYS

IXGK50N60B Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXGK50N60B2D1	IGBT Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V CGR VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE =	IXYS
IXGK50N60B	(IXGx50N60B) HiPerFAST IGBT HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 VCE(sat) tfi(typ) = 120 TO-247 AD (IXGH) = 600 = 75 = 2.3 V A V ns Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C	IXYS Corporation
IXGK50N60BU1	HiPerFAST IGBT HiPerFASTTM IGBT with Diode V CES I C25 V CE(sat) 2.3 V 2.5 V t fi 100ns 120ns IXGK 50N50BU1 IXGK 50N60BU1 500 V 75 A 600 V 75 A Combi Pack Preliminary data Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Trans	IXYS Corporation

Esta página es del resultado de búsqueda del IXGK50N60B2D1. Si pulsa el resultado de búsqueda de IXGK50N60B2D1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap