IXGK35N120BD1 データシート PDFこの部品の機能は「Igbt ( Insulated Gate Bipolar Transistor )」です。 |
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部品番号 |
IXGK35N120BD1 IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(typ) 160 ns (D1) Symbol Test Conditions V CES VC IXYS |
文字列「 IXGK35N120BD1 」「 35N120BD1 」で始まる検索結果です。 |
部品説明 |
IXGX35N120BD1 IGBT Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(typ) 160 ns (D1) Symbol Test Conditions V CES VCGR V GES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to IXYS |
IXSK35N120BD1 HIGH VOLTAGE IGBT WITH DIODE High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.6 mm (0.063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150 IXYS Corporation |
IXSR35N120BD1 IGBT IGBT with Diode ISOPLUS 247TM Short Circuit SOA Capability IXSR 35N120BD1 (Electrically Isolated Backside) VCES IC25 VCE(sat) tfi(typ) = 1200 V = 70 A = 3.6 V = 180 ns Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continu IXYS Corporation |
IXSX35N120BD1 HIGH VOLTAGE IGBT WITH DIODE High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.6 mm (0.063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150 IXYS Corporation |
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