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Datasheet IXGH60N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IXGH60N60 | (IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT |
 IXYS Corporation |
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| 4 | IXGH60N60 | Ultra-Low VCE(sat) IGBT Ultra-Low VCE(sat) IGBT
IXGH 60N60 IXGK 60N60 IXGT 60N60
VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, li |
IXYS Corporation |
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| 3 | IXGH60N60B2 | IGBT
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching
IXGH 60N60B2 IXGT 60N60B2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A < 1.8 V = 100 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Te |
IXYS Corporation |
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| 2 | IXGH60N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBTs
Advance Technical Data
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 60N60C2 IXGT 60N60C2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A = 2.5 V = 35 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1 |
IXYS Corporation |
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