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Datasheet IXFX90N30 Equivalent ( PDF )

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1 IXFX90N30   HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous T
 IXYS Corporation
IXYS Corporation		 datasheet IXFX90N30 pdf

IXFX90 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXFX90N30

HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS =
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXFX90N60X

Power MOSFET ( Transistor )

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFK90N60X IXFX90N60X VDSS = ID25 = RDS(on)  600V 90A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg
IXYS
IXYS		 datasheet pdf - IXYS
IXFX90N20Q

HiPerFETTM Power MOSFETs Q-CLASS

Advanced Technical Information HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounti
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation


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