Datasheet IXFX32N90P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFX32N90P	Power MOSFET ( Transistor ) Advance Technical Information PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK32N90P IXFX32N90P VDSS ID25 RDS(on) = 900V = 32A < 300mΩ TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight	IXYS

IXFX32N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFX32N100Q3	Power MOSFET ( Transistor ) Advance Technical Information HiperFETTM Power MOSFETs Q3-Class IXFK32N100Q3 IXFX32N100Q3 N-Channel Enhancement Mode Fast Intrinsic Rectifier VDSS = ID25 = ≤RDS(on) trr ≤ 1000V 32A 320mΩ 250ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Ts	IXYS
IXFX32N50Q	(IXFx3xN50Q) HiPerFET Power MOSFETs Q-Class HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS(on) 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM Test Conditions	IXYS Corporation
IXFX32N100P	Power MOSFET ( Transistor ) PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK32N100P IXFX32N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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