Datasheet IXFX16N90 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFX16N90	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ =	IXYS

IXFX16 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFX160N30T	GigaMOS Power MOSFET Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30T IXFX160N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 160A 19mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA E	IXYS
IXFX16N90	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ =	IXYS
IXFX160N30T	GigaMOS Power MOSFET Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30T IXFX160N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 160A 19mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA E	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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