IXFT80N085 データシート PDFこの部品の機能は「Hiperfettm Power Mosfets」です。 |
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部品番号 |
IXFT80N085 HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS(on) = 9 mW trr £ 200 ns Symbol VDSS VDGR IXYS Corporation |
文字列「 IXFT80N085 」「 80N085 」で始まる検索結果です。 |
部品説明 |
880085 1575 MHz GPS L1 BAW Filter Data Sheet Features • • • • • For GPS L1 applications Usable bandwidth of 15 MHz Single-ended operation Ceramic Surface Mount Package Hermetic Part Number 880085 1575 MHz BAW Filter Package Surface Mount 3.26 x 1.60 x 0.84 mm Pin Configuration Bottom View www.DataSh TriQuint Semiconductor |
IXFC80N085 (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFC 80N08 IXFC 80N085 80 V 85 V ID25 RDS(on) 80 A 9 mΩ 80 A 9 mΩ Symbol VDSS VDGR VG IXYS Corporation |
IXFH80N085 HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS(on) = 9 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Co IXYS Corporation |
IXFN280N085 Power MOSFET ( Transistor ) HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt Pd TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ IXYS |
IXFR180N085 HiPerFET-TM Power MOSFETs HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 m IXYS Corporation |
IXTA180N085T Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 180 5.5 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Condition IXYS Corporation |
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