IXFT58N20Q データシート PDFこの部品の機能は「Hiperfet Power Mosfets」です。 |
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部品番号 |
IXFT58N20Q HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg www.Datasheet.jp Preliminary data sheet IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS(on) = 200 V = 58 A = IXYS Corporation |
文字列「 IXFT58N20 」「 58N20Q 」で始まる検索結果です。 |
部品説明 |
IXFT58N20 HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 200 V 200 V 200 V ID25 RDS(on) 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR V IXYS Corporation |
1N5820 SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20/ 30/ 40 VOLTS MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial cons MotorolaInc |
1N5820 3 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes) 1N5820 THRU 1N5822 3 AMPERE SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes FEATURES l l High surge current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing l l l Flame Retardant Epoxy Molding Compound Hi Pan Jit International Inc. |
1N5820 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Ampere Surge Components |
1N5820 3 AMPERE SCHOTTKY BARRIER RECTIFIER TRSYS |
1N5820 3.0A SCHOTTKY BARRIER RECTIFIER Won-Top Electronics |
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