Datasheet IXFT30N40Q Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFT30N40Q	HiPerFET Power MOSFETs Q-Class HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 30N40Q IXFT 30N40Q VDSS ID25 RDS(on) = 400 V = 30 A = 0.16 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Condition	IXYS

IXFT30N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFT30N60X	Power MOSFET ( Transistor ) X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TS	IXYS
IXFT30N60Q	Power MOSFET ( Transistor ) HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet IXFH 30N60Q IXFT 30N60Q VDSS ID25 RDS(on) = 600 V = 30 A = 0.23 Ω trr ≤ 250 ns Symbol VVDDGSRS VVGGSSM IIDDM25 IAR EAR EAS dv/dt PD TJ TTJsMtg TL Md Wei	IXYS
IXFT30N60P	PolarHV HiPerFET Power MOSFET Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr 600 V 30 A 240 mΩ 250 ns Symbol VDSS VDGR V	IXYS

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