Datasheet IXFR80N20Q Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFR80N20Q	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mount	IXYS Corporation

IXFR80N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFR80N50P	PolarHV HiPerFET Power MOSFET ISOPLUS247 Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR 80N50P VDSS ID25 RDS(on) trr = 500 V = 42 A < 72 mΩ < 200 ns Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR	IXYS
IXFR80N20Q	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from	IXYS Corporation
IXFR80N15Q	HiPerFET Power MOSFETs Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt IXFR 80N15Q VDSS = 150 V = 75 A ID25 RDS(on) = 22.5 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EA	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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