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Datasheet IXFR14N80 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXFR14N80   Power MOSFET ( Transistor )

HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family rr V = 800 DSS ID25 = 14 =RDS(on) 0.7 V A Ω trr ≤ 250 ns Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL VISOL Weight Symbol VDSS V
 IXYS
IXYS		 datasheet IXFR14N80 pdf

IXFR14 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXFR140N20P

PolarHT HiPerFET Power MOSFET

Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Wei
 IXYS
IXYS		 datasheet pdf - IXYS
IXFR14N100Q2

HiPerFET Power MOSFET

Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from
 IXYS
IXYS		 datasheet pdf - IXYS
IXFR14N80

Power MOSFET ( Transistor )

HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family rr V = 800 DSS ID25 = 14 =RDS(on) 0.7 V A Ω trr ≤ 250 ns Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL VISOL
IXYS
IXYS		 datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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