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Datasheet IXFN80N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IXFN80N50 | (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 80N50 IXFN 75N50
D G S
ID25 80 A 75 A
RDS(on) 50 mΩ 55 mΩ
500 V 500 V
S
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol
Test Cond |
 IXYS Corporation |
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| 3 | IXFN80N50P | PolarHV HiPerFET Power MOSFET Advance Technical Information
IXFN 80N50P
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 80N50P
VDSS ID25 trr
RDS(on)
= 500 V = 65 A ≤ 65 mΩ ≤ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM T |
 IXYS |
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| 2 | IXFN80N50Q2 | HiPerFET Power MOSFET Advance Technical Information
HiPerFETTM Power MOSFET
IXFN 80N50Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
VDSS = 500 V ID25 = 80 A RDS(on)= 60 mΩ ≤ 250 ns trr
miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM |
IXYS |
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| 1 | IXFN80N50Q3 | Power MOSFET ( Transistor ) Advance Technical Information
HiperFETTM Power MOSFET Q3-Class
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFN80N50Q3
VDSS ID25
RDS(on) trr
= = ≤ ≤
500V 63A 65mΩ 250ns
miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, |
IXYS Corporation |
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