Datasheet IXFN36N100 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFN36N100	HiPerFET Power MOSFETs Single Die MOSFET HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS =	ETC

IXFN36N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFN36N100	HiPerFET Power MOSFETs Single Die MOSFET HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25	ETC
IXFN36N60	HiPerFET Power MOSFET IXFK 32N60 IXFK 36N60 Preliminary Data IXFN 32N60 IXFN 36N60 ID25 RDS(on) 0.18Ω 0.25Ω t rr 250ns 250ns VDSS HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A TO-264 AA	IXYS
IXFN36N110P	Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight www.DataSheet4U.net IXFN36N110P VDSS = ID25 = RDS(on) ≤ ≤ trr 1100V 36A 240mΩ 300ns Test Co	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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