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Datasheet IXFN32N120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXFN32N120 | HiPerFET Power MOSFETs Advanced Technical Data
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 32N120
VDSS ID25
RDS(on)
= 1200V = 32A = 0.35Ω
D
G S
S
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL
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Test Conditions TJ = |
 IXYS Corporation |
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| 1 | IXFN32N120P | Polar HiPerFET Power MOSFET PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN32N120P
VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ ≤ 300ns trr
miniBLOC E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25° |
IXYS Corporation |
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