Datasheet IXFN20N120P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFN20N120P	Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN20N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 20A 570mΩ 300ns Test Conditions TJ = 25°C to 150	IXYS Corporation

IXFN20N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFN20N120P	Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN20N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 20A 570mΩ 300ns Test Conditio	IXYS Corporation
IXFN20N120	HiPerFET Power MOSFETs Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 20N120 VDSS ID25 D = 1200 V = 20 A RDS(on) = 0.75 Ω ≤ 300 ns trr G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISO	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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